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1 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. primary applications product description key features measured performance 8 - 15 ghz packaged doubler with amplifier bias conditions: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical the triquint tgc4403-sm packaged mmic combines a frequency doubler with a 3-stage amplifier, operating at input frequencies of 8 - 15 ghz. with greater than 30 dbc isolation between the input and doubled frequency, the tgc4403-sm achieves 20 dbm output power, with 2 dbm input power. this performance makes this doubler ideally suited for point to point radios and ka- band satellite ground terminal applications. the tgc4403-sm provides the frequency doubling function in an compact 4 mm x 4 mm package footprint. each device is 100% dc and rf tested on?wafer to ensure performance compliance. the device is available in chip form. the tgc4403-sm has a protective surface passivation layer on the mmic providing environmental robustness. lead-free and rohs compliant. ? rf output frequency range: 16-30 ghz ? input frequency range: 8 - 15 ghz ? 20 dbm nominal pout ? 18 db gain ? 30 dbc input frequency isolation ? bias: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical ? package dimensions: 4 x 4 x 0.9 mm ? point-to-point radio ? ka band sat-com
2 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage 12 v vd drain voltage 8 v 2/ vdbl doubler voltage range -5 to 0 v vg gate voltage range -5 to 0 v id positive current 280 ma 2/ ig gate current range -1 to 23 ma idbl doubler current range -0.6 to 16.8 ma pin input continuous wave power 18.2 dbm 2/ 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current , input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter 1/ value vd drain voltage 5 v id drain current (quiescent) 150 ma id_drive drain current with rf input = 2 dbm 170 ma vg gate voltage -0.5 v vdbl doubler voltage -0.8 v 1/ see assembly diagram for bias instructions.
3 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table bias: vd = 5 v, id = 150 ma, vg = -0 .5 v typcial, vdbl = -0.8 v fixed symbol parameter test condi tions min nominal max units rf_freq input frequency range 8 - 15 ghz cgain conversion gain (rfin = 2 dbm) freq_in= 8 ? 14.5 ghz freq_out = 16 - 29 ghz freq_in= 15 ghz freq_out = 30 ghz 14 12 18 16 db irl input return loss freq = 8 - 15 ghz 6 db orl output return loss freq = 16 - 30 ghz 4 db pout output power (rfin = 2 dbm) freq = 16 - 30 ghz 16 20 dbm isol_1x isolation, fundamental freq_in= 8 ? 14.5 ghz freq_out = 8 ? 14.5 ghz 11 30 dbc isol_3x isolation, 3 rd harmonic freq_in= 8 ? 10.5 ghz freq_out = 24?31.5 ghz 1 10 dbc
4 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv power dissipation and thermal properties 1/ channel operating temperature will directly affect the device median lifetime (tm). for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. parameter test conditions value notes maximum power dissipation tbaseplate = 70 c pd = 1.42 w tchannel = 150 c tm = 1.0e+6 hrs 1/ thermal resistance, jc vd = 5 v id = 150 ma pd = 0.75 w jc = 56.3 (c/w) tchannel = 112 c tm = 3.4e+7 hrs thermal resistance, jc under rf drive vd = 5 v id = 170 ma pout = 22 dbm pd = 0.69 w jc = 56.3 (c/w) tchannel = 109 c tm = 4.6e+7 hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 c
5 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias conditions: vd = 5 v, id = 150 ma, vg = -0.5 v, vdbl = -0.8 v typical measured data
6 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data measured data bias conditions: vd = 5 v, id = 150 ma, vg = -0.5 v, vdbl = -0.8 v typical
7 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 5 v, id = 150 ma, vg = -0.5 v, vdbl = -0.8 v typical
8 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com pin description 1, 2, 4, 7, 8, 9, 11, 12, 13, 15, 16 n/c 3 rf input 5 vdbl 6v g 10 rf out 14 vd 17 gnd pin #1 identification 1 2 3 4 56 7 8 12 11 10 9 13 14 15 16 17 pin #1 dot top view bottom view package pinout
9 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com electrical schematic bias procedures bias-up procedure ? vg set to -1.5 v ? vd set to +5 v ? vdbl set to -0.8 v ? adjust vg more positive until id is 150 ma. this will be ~ vg = -0.5 v ? apply signal to input, id will increase bias-down procedure ? turn off signal ? reduce vg to -1.5v. ensure id ~ 0 ma ? turn vdbl to 0v ? turn vd to 0v ? turn vg to 0v vd doubler 2x buffer tgc4403-sm rf in rf out vg vdbl 100 pf 100 pf 1 uf 100 pf 1 uf 15 ? 1 uf 15 ? x 2
10 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters
11 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com recommended assembly diagram part description c1,c2,c3 1 uf capacitor (0402) c4,c5,c6 100 pf capacitor (0402) r1,r2 15 ohm resistor (0402) gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
12 tgc4403-sm may 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly notes ordering information part package style tgc4403-sm qfn 4x4 surface mount recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alc ohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder pas te for attachment. follow solder paste and reflow oven vendors? recommendations when dev eloping a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent me chanical and electrical performance. ? clean the assembly with alcohol. reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec typical solder reflow profiles

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